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Photolithography: 1X Proximity/ contact, double Alignment, I-line stepper, Min CD 1um

Thin film: Oxide, LPCVD, TEOS, PECVD

Metal: Evaporation, Sputter

Wet Etch: KOH, BOE/HF.

Dry Etch: RIE, DRIE(D/W 40)

Bond: Si-Si bond, Si-Glass bond, eutectic bond, Diffusion bond

Piezoelectric material: AlN

Release: VHF etch, XeF2 etch

Wafer Thinning: Grind, CMP



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